? 2003 ixys all rights reserved isolated backside* symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c18a i dm t c = 25 c, note 1 84 a i ar t c = 25 c21a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 min 2500 v~ weight 5 g isoplus 247 tm features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z ixys advanced low q g process z low gate charge and capacitances - easier to drive -faster switching z low drain to tab capacitance(<30pf) z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z rated for unclamped inductive load switching (uis) z fast intrinsic rectifier applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control advantages z easy assembly z space savings z high power density g = gate d = drain s = source * patent pending e153432 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 4ma 3 5 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c 2 ma r ds(on) v gs = 10 v, i d = i t 0.5 ? notes 2, 3 hiperfet tm power mosfets isoplus247 tm (electrically isolated back surface) n-channel enhancement mode, low q g, high dv/dt, low t rr , hdmos tm family ixfr 21n100q ds98723b(01/03) v dss = 1000 v i d25 = 18 a r ds(on) = 0.50 ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = i t notes 2, 3 16 22 s c iss 5900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 550 pf c rss 90 pf t d(on) 21 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 18 ns t d(off) r g = 1 ? (external), notes 2, 3 60 n s t f 12 ns q g(on) 170 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 38 nc notes 2, 3 q gd 75 nc r thjc 0.35 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 21 a i sm repetitive; note 1 84 a v sd i f = i t , v gs = 0 v, notes 2, 3 1.5 v t rr 250 ns q rm 1.4 c i rm 8a i f = i s ,-di/dt = 100 a/ s, v r = 100 v note: 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % 3. i t = 10.5a isoplus 247 outline dim. mil limeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 1 gate, 2 drain (collector) 3 source (emitter) 4 no connection ixfr 21n100q
? 2003 ixys all rights reserved ixfr 21n100q v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 i d - amperes 0 4 8 12 16 20 24 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.4 1.8 2.2 2.6 i d - amperes 0 102030 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts 0 5 10 15 20 25 30 35 i d - amperes 0 5 10 15 20 25 30 t j = 125 o c 4v 4v 5v v gs = 9v 8v 7v 6v 5v t j = 25 o c v gs = 10v t j = 25 o c v ds - volts 0 5 10 15 20 i d - amperes 0 10 20 30 40 v gs = 9v 8v 7v 6v t j = 25 o c i d =21a i d =10.5a v gs = 10v t j = 125 o c t j = 125 o c fig.2 output characteristics @ t j = 125c fig.4 temperature dependence of drain to source resistance fig.6 drain current vs gate source voltage fig.1 output characteristics @ t j = 25c fig.3 r ds(on) vs. drain current fig.5 drain current vs. case temperature
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfr 21n100q v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d - amperes 0 15 30 45 60 75 90 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 r(th) jc - k/w 0.001 0.010 0.100 1.000 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 gate charge - nc 0 40 80 120 160 200 v gs - volts 0 2 4 6 8 10 crss coss v ds = 500 v i d = 21 a i g = 10 ma f = 100khz t j = 125 o c t j = 25 o c ciss 30000 60 fig. 7 gate charge characteristic curve fig. 8 capacitance curves fig. 9 drain current vs drain source voltage fig. 10 transient thermal impedance
|
